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Freescale Semiconductor Technical Data
Document Number: MRF7S21080H Rev. 0, 11/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD - SCDMA and PCN - PCS/cellular radio applications. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 22 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 18 dB Drain Efficiency -- 32% Device Output Signal PAR -- 6.5 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 38 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 80 Watts CW Peak Tuned Output Power * Pout @ 1 dB Compression Point w 80 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S21080HR3 MRF7S21080HSR3
2110 - 2170 MHz, 22 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465- 06, STYLE 1 NI - 780 MRF7S21080HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF7S21080HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 79C, 79 W CW Case Temperature 75C, 22 W CW Symbol RJC Value (2,3) 0.60 0.65 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF7S21080HR3 MRF7S21080HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 174 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 800 mAdc) Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 800 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.74 Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 0.64 296 160 -- -- -- pF pF pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.5 -- 4 0.1 2 2.7 5.5 0.2 3 -- 7 0.3 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 22 W Avg., f = 2112.5 MHz and f = 2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 16.5 30 5.7 -- -- 18 32 6.5 - 38 - 16 19.5 -- -- - 35 -9 dB % dB dBc dB
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued)
MRF7S21080HR3 MRF7S21080HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Video Bandwidth @ 70 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 60 MHz Bandwidth @ Pout = 22 W Avg. Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 80 W CW Average Group Delay @ Pout = 80 W CW, f = 2140 MHz Part - to - Part Insertion Phase Variation @ Pout = 80 W CW, f = 2140 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol VBW -- 10 -- Min Typ Max Unit MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, 2110 - 2170 MHz Bandwidth
GF Delay G P1dB
-- -- -- -- -- --
0.12 22.3 6.21 151.6 0.009 0.008
-- -- -- -- -- --
dB ns dB/C dBm/C
MRF7S21080HR3 MRF7S21080HSR3 RF Device Data Freescale Semiconductor 3
R1 VBIAS
Z15 VSUPPLY +
C5
R2
C4
C3
Z14
C10
C12
C13
C16
R3 RF INPUT Z1 C1 C17 C2 Z2 Z3 Z4 Z5
Z6 Z7 Z8 Z9 Z10 Z11 Z12 C9 DUT Z16 C6 C7 C8 Z13 RF OUTPUT
C11
C14
C15
Z1 Z2* Z3* Z4* Z5 Z6 Z7 Z8 Z9*
0.325 x 0.083 Microstrip 0.921 x 0.083 Microstrip 0.126 x 0.083 Microstrip 0.645 x 0.083 Microstrip 0.275 x 0.669 Microstrip 0.114 x 0.764 Microstrip 0.374 x 0.764 Microstrip 0.180 x 0.524 Microstrip 0.075 x 0.083 Microstrip
Z10* Z11* Z12* Z13 Z14* Z15, Z16* PCB
0.457 x 0.083 Microstrip 0.118 x 0.083 Microstrip 0.206 x 0.083 Microstrip 0.301 x 0.083 Microstrip 1.220 x 0.080 Microstrip 0.720 x 0.080 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55
* Variable for tuning
Figure 1. MRF7S21080HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S21080HR3(HSR3) Test Circuit Component Designations and Values
Part C1, C3, C9, C10, C11 C2 C4 C5, C12, C13, C14, C15 C6 C7, C8, C17 C16 R1, R2 R3 Description 6.8 pF Chip Capacitors 0.5 pF Chip Capacitor 220 nF Chip Capacitor 10 F, 50 V Chip Capacitors 1.5 pF Chip Capacitor 0.2 pF Chip Capacitors 220 F, 63 V Electrolytic Capacitor, Radial 2 K, 1/4 W Chip Resistors 10 , 1/4 W Chip Resistor Part Number ATC100B6R8BT500XT ATC100B0R5BT500XT 18125C224KAT1A C5750X5R1H106M ATC100B1R5BT500XT ATC100B0R2BT500XT 222213668221 CRCW12062001FKEA CRCW120610R0FKEA Manufacturer ATC ATC AVX TDK ATC ATC Vishay Vishay Vishay
MRF7S21080HR3 MRF7S21080HSR3 4 RF Device Data Freescale Semiconductor
R2 VGS R1 C4 C3 C5 C10 C16 C12 C13 VDD
R3 C1
C17 C2
CUT OUT AREA
C6
C7 C8
C9
C11
C14
C15
MRF7S21080H Rev. 1
Figure 2. MRF7S21080HR3(HSR3) Test Circuit Component Layout
MRF7S21080HR3 MRF7S21080HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 19 18.8 18.6 Gps, POWER GAIN (dB) 18.4 18.2 18 17.8 17.6 17.4 PARC 17.2 17 2060 2080 2100 2120 IRL VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 800 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) Gps D 34 33 32 31 30 0 -0.5 -1 -1.5 -2 2160 2180 2200 -2.5 2220 PARC (dB)
-4 -8 -12 -16 -20 -24
2140
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 22 Watts Avg.
18.2 18 Gps, POWER GAIN (dB) 17.8 17.6 17.4 17.2 17 16.8 16.6 PARC IRL 16.4 2060 2080 2100 2120 2140 2160 2180 2200 VDD = 28 Vdc, Pout = 40 W (Avg.), IDQ = 800 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) Gps D 45 44 43 42 41 -2 PARC (dB) -2.5 -3 -3.5 -4 2220 -4 -8 -12 -16 -20
D, DRAIN EFFICIENCY (%)
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 40 Watts Avg.
20 19 Gps, POWER GAIN (dB) 18 17 600 mA 16 15 14 13 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 400 mA VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing 1000 mA 800 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1200 mA -10 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing -20 IDQ = 400 mA -30 600 mA -40 1200 mA 1000 mA -50 800 mA
-60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF7S21080HR3 MRF7S21080HSR3 6 RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -10 -20 -30 -40 -50 -60 7th Order -70 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP 3rd Order 5th Order VDD = 28 Vdc, IDQ = 800 mA f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing -10 -20 -30 -40 -50 -60 -70 1 10 TWO-TONE SPACING (MHz) 100 IM5-U IM5-L IM7-U IM7-L VDD = 28 Vdc, Pout = 70 W (PEP), IDQ = 800 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz IM3-L IM3-U
Figure 7. Intermodulation Distortion Products versus Output Power
1 OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON CCDF (dB)
Figure 8. Intermodulation Distortion Products versus Tone Spacing
70 Ideal 60 50 -1 dB = 21.65 W -2 dB = 20.9 W 40 30 -3 dB = 39.9 W VDD = 28 Vdc, IDQ = 800 mA f = 2140 MHz, Input Signal PAR = 7.5 dB 10 20 30 40 50 Actual 20 10 0 60 D, DRAIN EFFICIENCY (%)
0 -1 -2 -3 -4 -5 -6 Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
-20 -30 20 19 Gps, POWER GAIN (dB) 18 17 16 15 14 DPD Corrected, with Memory Correction -70 38 13 39 40 41 42 43 44 45 46 47 48 49 1 10 Pout, OUTPUT POWER (WATTS) CW 100 Pout, OUTPUT POWER (dBm) D VDD = 28 Vdc IDQ = 800 mA f = 2140 MHz -30_C Gps TC = -30_C 25_C 85_C 25_C 85_C 50 40 30 20 10 0 200 70 60 D, DRAIN EFFICIENCY (%)
ACPR, UPPER AND LOWER RESULTS (dBc)
VDD = 28 Vdc, IDQ = 800 mA, f = 2140 MHz, Single-Carrier W-CDMA, Input Signal PAR = 7.5 dB ACPR @ 5 MHz Offset in 3.84 MHz Integrated Bandwidth Uncorrected Upper and Lower DPD Corrected No Memory Correction
-40
-50
-60
Figure 10. Digital Predistortion Correction versus ACPR and Output Power
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
MRF7S21080HR3 MRF7S21080HSR3 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
19 IDQ = 800 mA f = 2140 MHz Gps, POWER GAIN (dB) 18 MTTF (HOURS) VDD = 24 V 15 0 40 80 120 160 Pout, OUTPUT POWER (WATTS) CW 28 V 32 V 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 22 W Avg., and D = 32%. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 107 108
17
106
16
Figure 12. Power Gain versus Output Power
Figure 13. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 -30 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 Compressed Output Signal @ 22 W Pout Input Signal -50 (dB) -60 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW -40 -10 -20 3.84 MHz Channel BW
PEAK-TO-AVERAGE (dB)
Figure 14. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
Figure 15. Single - Carrier W - CDMA Spectrum
MRF7S21080HR3 MRF7S21080HSR3 8 RF Device Data Freescale Semiconductor
f = 2040 MHz Zo = 25
Zload f = 2220 MHz f = 2220 MHz f = 2060 MHz Zsource f = 2060 MHz
VDD = 28 Vdc, IDQ = 800 mA, Pout = 22 W Avg. f MHz 2060 2080 2100 2120 2140 2160 2180 2200 2220 Zsource W 7.16 - j11.074 7.066 - j10.796 6.954 - j10.526 6.857 - j10.260 6.745 - j9.980 6.668 - j9.728 6.588 - j9.462 6.511 - j9.203 6.403 - j8.892 Zload W 4.403 - j6.809 4.275 - j6.662 4.147 - j6.515 4.017 - j6.375 3.889 - j6.233 3.764 - j6.126 3.642 - j6.016 3.519 - j5.895 3.401 - j5.774
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF7S21080HR3 MRF7S21080HSR3 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
B G
1
2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465 - 06 ISSUE G NI - 780 MRF7S21080HR3
4X U (FLANGE)
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
CASE 465A - 06 ISSUE H NI - 780S MRF7S21080HSR3
MRF7S21080HR3 MRF7S21080HSR3 10 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Nov. 2007 * Initial Release of Data Sheet Description
MRF7S21080HR3 MRF7S21080HSR3 RF Device Data Freescale Semiconductor 11
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MRF7S21080HR3 MRF7S21080HSR3
Rev. 12 0, 11/2007 Document Number: MRF7S21080H
RF Device Data Freescale Semiconductor

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